Electronic components from IXYS
Starmans electronics Ltd. company is the exclusive importer of electronic components from IXYS company:
About IXYS Corporation
Since its inception in 1983, IXYS Corporation has been developing technology-driven products to improve power conversion efficiency, generate solar and wind power and provide efficient motor control for industrial applications. IXYS, and its subsidiary companies, offer a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, flexible displays and RF power. For more information, visit www.ixys.com.
News in 2003 - cooperation with DEI and CLARE company RF high-power MOSFETs and drivers from DEI company, memories from Paradigm company, HV ICs, OptoMOS from CLARE company, extended portfolio of isolated boxes ISOPLUS-264 / -227 / -i4-PAC, new boxes ECO-PAC, SOT-227B for multichip topologies, SMA-SMB-SMC(schottky) and additional news in whole product portfolio.
IGBT Module - 600-1200V/6-670A in construction CIB, CIB1/2/3, NPT (6 Pack), Single Switch, Phase Leg, H - Bridge, 6 Pack, Buck/Boost Chopper
NPT IGBT (discrete) - 600-1200V/32-150A in construction Single Switch, Phase Leg, Boost Chopper, 1phase bridge + IGBT, RIGBT - IGBT with revesability blocking capacity 600-1200V/60A
IGBT (discrete) - 600-1700V/4-200A in construction, High Speed / Low Sat. / + Fast Diode
BIMOSFET - High Speed 1400-1600V/7-33A / Trr = 40-70 ns, 1700V/16-70A / Trr = 50/1200 ns
POWER MOSFETs - HiPerRF - 200-1000V/6-60A (up to 150MHz), HiPerFETs - 60-1000V/4-340A (Low Gate-Charge), MegaMOSFET - 100-1200V/ 0,1-180A , P-Channel -100-600V/7-50A, CoolMOS - 600-800V/13-75A (low Rds(on)), RF MOSFETs - 100-1000V/1,5-44A (do 100MHz)
MOSFET Modules - 100-900V/21-690A in construction Single Switch, Dual Switch, Phase Leg, 6 Pack Trench Gate, H-Bridge, Buck/Boost Chopper
Gallium Arsenide Schottky - 150-500V/6-17A, Silicon Schottky - 8-180V/6-160A, HiperDyn FRED 600-1200V/9-35A, Silicon Carbide Diodes - 600V/5A, Dual Ultrafast Diodes -300-1200V/10-53A
HiPerFRED and FRED Diodes - 200-2400V/8-126A, FRED Modules - 200V-1200V/60-586A
Rectifier Diodes - 0,8-1,8kV/2-160A, Diode Modules - 0,8-2,2kV/36-560A, Thyristor/Diode Modules
Breakover Diodes - 600-1000V (Single), 1200V-4200V Modules (R , RD/+ Diode)
HV Rectifiers - 3,2-24kV/1-10A (1f/3f, Single), HV Diode Assembly - 2-64kV/1-10A (for RF application)
Phase Control Thyristors - 800-1600V/16-63A, Thyristor Modules- 0,6-2,2kV/18-600A, Single/Dual
AC Controller 1f/2f/3f - 800-1600V/39-143A, 1phase with isolated water cooling 1200-1800V/900A
1f-3f Rectifier Bridges - 600-1800V/21-248A, Half/Full Controlled - 800-1600V/32-167A
1f-3f PFC Modules (in different combinations), 3f Bridges + IGBT + diode (for braking units)
IC - Half Bridge Driver Chipsset, HV Current Regulators, Ultra-fast Power MOSFET/IGBT Drivers, Bus compatible Digital PWM Controller, Digital Deadtime Generator, Memory Products SRAM
A New Generation of Ultrafast Recovery Diodes in the 600V to 1800V Range
SANTA CLARA, Calif.--(BUSINESS WIRE)--IXYS Corporation (NASDAQ:IXYS - News), a leader in power semiconductors and ICs for power conversion and motion control applications, announces today the expansion of its new generation of ultrafast recovery diodes called the Sonic-FRDTM family. These new products are produced in IXYS' own wafer fabrication plant, utilizing proprietary and advanced processing technology that optimizes the fast switching speed of the diode, with low forward voltage drop (Vf), and no "snappiness" for 600V, 1200V and 1800V ratings. The Sonic-FRDTM diode family is ideally suited for power applications with high switching frequencies (20-200 kHz), and especially in boost and free wheeling configurations, such as in power factor correction (PFC) circuits and switch mode power supplies (SMPS). All of these will benefit from the optimised characteristics of small reverse recovery current (Irr) and small stored charge (Qrr), as well as a soft recovery. The results are reduced energy losses for the diode as well as for the switching transistor in the power circuit. An added benefit of the soft recovery of these diodes in turn off is the minimized EMI noise they generate in switching and the elimination of the need to add costly snubber circuitry for the switching transistors. The Sonic-FRDTM family have a Vrrm rating from 600 V to 1800 V with different current values from 5A up to 60A. More than 25 products in various configurations and packages include the isolated ISOPLUS-packages of IXYS. Some part types examples are: DHG5I600PA (5A, 600V); DHG30I600PA (30A, 600V); DHG10I1200PM (10A, 1200V); DHG40C1200HB (40A, 1200V); and DH60-18A, DH2x61-18A (60A, 1800V). The Sonic-FRDTM rectifiers provide high efficiency and high power density at lower costs.
Electronic catalogues:
| www.ixys.com |
Since its inception in 1983, IXYS Corporation has been developing technology-driven products to improve power conversion efficiency, generate solar and wind power and provide efficient motor control for industrial applications. IXYS, and its subsidiary companies, offer a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, flexible displays and RF power. For more information, visit www.ixys.com.
News in 2003 - cooperation with DEI and CLARE company RF high-power MOSFETs and drivers from DEI company, memories from Paradigm company, HV ICs, OptoMOS from CLARE company, extended portfolio of isolated boxes ISOPLUS-264 / -227 / -i4-PAC, new boxes ECO-PAC, SOT-227B for multichip topologies, SMA-SMB-SMC(schottky) and additional news in whole product portfolio.
IGBT Module - 600-1200V/6-670A in construction CIB, CIB1/2/3, NPT (6 Pack), Single Switch, Phase Leg, H - Bridge, 6 Pack, Buck/Boost Chopper
NPT IGBT (discrete) - 600-1200V/32-150A in construction Single Switch, Phase Leg, Boost Chopper, 1phase bridge + IGBT, RIGBT - IGBT with revesability blocking capacity 600-1200V/60A
IGBT (discrete) - 600-1700V/4-200A in construction, High Speed / Low Sat. / + Fast Diode
BIMOSFET - High Speed 1400-1600V/7-33A / Trr = 40-70 ns, 1700V/16-70A / Trr = 50/1200 ns
POWER MOSFETs - HiPerRF - 200-1000V/6-60A (up to 150MHz), HiPerFETs - 60-1000V/4-340A (Low Gate-Charge), MegaMOSFET - 100-1200V/ 0,1-180A , P-Channel -100-600V/7-50A, CoolMOS - 600-800V/13-75A (low Rds(on)), RF MOSFETs - 100-1000V/1,5-44A (do 100MHz)
MOSFET Modules - 100-900V/21-690A in construction Single Switch, Dual Switch, Phase Leg, 6 Pack Trench Gate, H-Bridge, Buck/Boost Chopper
Gallium Arsenide Schottky - 150-500V/6-17A, Silicon Schottky - 8-180V/6-160A, HiperDyn FRED 600-1200V/9-35A, Silicon Carbide Diodes - 600V/5A, Dual Ultrafast Diodes -300-1200V/10-53A
HiPerFRED and FRED Diodes - 200-2400V/8-126A, FRED Modules - 200V-1200V/60-586A
Rectifier Diodes - 0,8-1,8kV/2-160A, Diode Modules - 0,8-2,2kV/36-560A, Thyristor/Diode Modules
Breakover Diodes - 600-1000V (Single), 1200V-4200V Modules (R , RD/+ Diode)
HV Rectifiers - 3,2-24kV/1-10A (1f/3f, Single), HV Diode Assembly - 2-64kV/1-10A (for RF application)
Phase Control Thyristors - 800-1600V/16-63A, Thyristor Modules- 0,6-2,2kV/18-600A, Single/Dual
AC Controller 1f/2f/3f - 800-1600V/39-143A, 1phase with isolated water cooling 1200-1800V/900A
1f-3f Rectifier Bridges - 600-1800V/21-248A, Half/Full Controlled - 800-1600V/32-167A
1f-3f PFC Modules (in different combinations), 3f Bridges + IGBT + diode (for braking units)
IC - Half Bridge Driver Chipsset, HV Current Regulators, Ultra-fast Power MOSFET/IGBT Drivers, Bus compatible Digital PWM Controller, Digital Deadtime Generator, Memory Products SRAM
A New Generation of Ultrafast Recovery Diodes in the 600V to 1800V Range
SANTA CLARA, Calif.--(BUSINESS WIRE)--IXYS Corporation (NASDAQ:IXYS - News), a leader in power semiconductors and ICs for power conversion and motion control applications, announces today the expansion of its new generation of ultrafast recovery diodes called the Sonic-FRDTM family. These new products are produced in IXYS' own wafer fabrication plant, utilizing proprietary and advanced processing technology that optimizes the fast switching speed of the diode, with low forward voltage drop (Vf), and no "snappiness" for 600V, 1200V and 1800V ratings. The Sonic-FRDTM diode family is ideally suited for power applications with high switching frequencies (20-200 kHz), and especially in boost and free wheeling configurations, such as in power factor correction (PFC) circuits and switch mode power supplies (SMPS). All of these will benefit from the optimised characteristics of small reverse recovery current (Irr) and small stored charge (Qrr), as well as a soft recovery. The results are reduced energy losses for the diode as well as for the switching transistor in the power circuit. An added benefit of the soft recovery of these diodes in turn off is the minimized EMI noise they generate in switching and the elimination of the need to add costly snubber circuitry for the switching transistors. The Sonic-FRDTM family have a Vrrm rating from 600 V to 1800 V with different current values from 5A up to 60A. More than 25 products in various configurations and packages include the isolated ISOPLUS-packages of IXYS. Some part types examples are: DHG5I600PA (5A, 600V); DHG30I600PA (30A, 600V); DHG10I1200PM (10A, 1200V); DHG40C1200HB (40A, 1200V); and DH60-18A, DH2x61-18A (60A, 1800V). The Sonic-FRDTM rectifiers provide high efficiency and high power density at lower costs.
Electronic catalogues: